ORIGIN OF THE BLUE-SHIFT OBSERVED IN HIGHLY STRAINED (GA,IN)AS QUANTUM-WELLS GROWN ON GAAS(001) VICINAL SURFACES

被引：17

作者：

LEROUX, M ^{[1
]}

GRANDJEAN, N ^{[1
]}

DEPARIS, C ^{[1
]}

MASSIES, J ^{[1
]}

LOPEZ, C ^{[1
]}

MAYORAL, R ^{[1
]}

MESEGUER, F ^{[1
]}

机构：

[1] INST CIENCIA MAT MADRID, E-28049 MADRID, SPAIN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1995年 / 34卷 / 7A期

关键词：

STRAINED QUANTUM WELLS; VICINAL SURFACES; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.34.3437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence energy of strained (Ga, In)As quantum wells grown on (001) GaAs slightly misoriented (2 degrees-6 degrees) towards (111)A exhibits a blue shift when compared to quantum wells grown on perfectly oriented substrates. It is shown that this observation is linked to a blue shift of intrinsic ground state excitonic transition energies. This effect is studied as a function of substrate misorientation angle, well width and indium surface segregation level. In order to understand its origin, various hypotheses were examined: regular shrinkage of well width due to terrace edges, additionnal stress of the well material at the step edges, and orientation dependent In segregation. It appears that the first two combined effects provide the best description of the experimental tendency.

引用

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页码：3437 / 3441

页数：5

相关论文

共 34 条

[1] X-RAY-DIFFRACTION EFFECTS IN GA AND AL ARSENIDE STRUCTURES MBE-GROWN ON SLIGHTLY MISORIENTED GAAS (001) SUBSTRATES [J].

AUVRAY, P ;

BAUDET, M ;

REGRENY, A .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :288-291

[2] MAGIC VICINAL SURFACES STABILIZED BY RECONSTRUCTION [J].

BARTOLINI, A ;

ERCOLESSI, F ;

TOSATTI, E .

PHYSICAL REVIEW LETTERS, 1989, 63 (08) :872-875

[3] ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].

BERGER, PR ;

CHANG, K ;

BHATTACHARYA, P ;

SINGH, J ;

BAJAJ, KK .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686

[4] STRAIN INDUCED 2D-3D GROWTH MODE TRANSITION IN MOLECULAR-BEAM EPITAXY OF INXGA1-XAS ON GAAS (001) [J].

CESCHIN, AM ;

MASSIES, J .

JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) :693-699

[5] PHOTOLUMINESCENCE UNDER PRESSURE OF ULTRATHIN ALAS LAYERS GROWN ON GAAS VICINAL SURFACES - A SEARCH FOR LATERAL CONFINEMENT EFFECTS [J].

CHASTAINGT, B ;

LEROUX, M ;

NEU, G ;

GRANDJEAN, N ;

DEPARIS, C ;

MASSIES, J .

PHYSICAL REVIEW B, 1993, 47 (03) :1292-1298

[6] KINETIC-MODEL OF ELEMENT-III SEGREGATION DURING MOLECULAR-BEAM EPITAXY OF III-III'-IV-SEMICONDUCTOR COMPOUNDS [J].

DEHAESE, O ;

WALLART, X ;

MOLLOT, F .

APPLIED PHYSICS LETTERS, 1995, 66 (01) :52-54

[7] OPTICAL-PROPERTIES OF A SINGLE STRAINED INGAAS/GAAS QUANTUM-WELL GROWN ON VICINAL GAAS-SURFACES [J].

DROOPAD, R ;

PUECHNER, RA ;

SHIRALAGI, KT ;

CHOI, KY ;

MARACAS, GN .

APPLIED PHYSICS LETTERS, 1991, 58 (16) :1777-1779

[8] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[9] DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS [J].

GRANDJEAN, N ;

MASSIES, J ;

ETGENS, VH .

PHYSICAL REVIEW LETTERS, 1992, 69 (05) :796-799

[10] IMPROVED GAINAS GAAS HETEROSTRUCTURES BY HIGH GROWTH-RATE MOLECULAR-BEAM EPITAXY [J].

GRANDJEAN, N ;

MASSIES, J ;

LEROUX, M ;

LEYMARIE, J ;

VASSON, A ;

VASSON, AM .

APPLIED PHYSICS LETTERS, 1994, 64 (20) :2664-2666

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