EVALUATION OF HOT-ELECTRON COHERENT LENGTH USING WELL WIDTH DEPENDENCE OF THE RESONANCE CHARACTERISTICS OF RESONANT-TUNNELING DIODES

被引:13
作者
KANG, YC
SUHARA, M
FURUYA, K
KOIZUMI, R
机构
[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro-ku, Tokyo 152, O-okayama
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8B期
关键词
RESONANT TUNNELING DIODE; COHERENT LENGTH; RESONANT LEVEL WIDTH; HOT ELECTRON;
D O I
10.1143/JJAP.34.4417
中图分类号
O59 [应用物理学];
学科分类号
摘要
In order to evaluate the hot electron coherent length from the resonance characteristics of resonant tunneling diodes (RTDs), the dependence of the resonant level width on various broadening mechanisms is investigated. From the dependence of the resonant level width on the well width, it is shown that the individual contributions to resonant level broadening (phase relaxation and well width variation) can be analyzed separately. The resonant level widths were measured experimentally and compared with theoretical results, and the coherent length was evaluated to range from 80 to 120 nm at 4.2 K in GaInAs at hot electron energies of 50 to 100 meV.
引用
收藏
页码:4417 / 4419
页数:3
相关论文
共 11 条
[1]   QUANTUM COHERENCE IN SEMICONDUCTOR SUPERLATTICES [J].
AGULLORUEDA, F ;
MENDEZ, EE ;
HONG, JM .
PHYSICAL REVIEW B, 1989, 40 (02) :1357-1360
[2]  
CAMPI D, 1994, SUPERLATTICE MICROST, V4, P253
[3]   NOVEL HIGH-SPEED TRANSISTOR USING ELECTRON-WAVE DIFFRACTION [J].
FURUYA, K .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) :1492-1494
[4]  
GALUT M, UNPUB JPN J APPL PHY
[5]   ESTIMATION OF PHASE COHERENT LENGTH OF HOT-ELECTRONS IN GAINAS USING RESONANT-TUNNELING DIODES [J].
KANG, YC ;
FURUYA, K ;
SUHARA, M ;
MIYAMOTO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12A) :6491-6495
[6]  
PING EX, 1989, PHYS REV B, V40, P792
[7]   INFLUENCE OF IMPURITIES ON THE PERFORMANCE OF DOPED-WELL GAINAS/INP RESONANT TUNNELING DIODES [J].
SEKIGUCHI, T ;
MIYAMOTO, Y ;
FURUYA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2B) :L243-L246
[8]   HIGH P/V RATIO OF GAINAS INP RESONANT TUNNELING DIODE GROWN BY OMVPE [J].
SEKIGUCHI, T ;
MIYAMOTO, Y ;
FURUYA, K .
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :807-811
[9]   TUNNELING SPECTROSCOPY OF RESONANT TRANSMISSION COEFFICIENT IN DOUBLE BARRIER STRUCTURE [J].
TSUCHIYA, M ;
SAKAKI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (06) :1164-1168
[10]   ROOM-TEMPERATURE OBSERVATION OF DIFFERENTIAL NEGATIVE-RESISTANCE IN AN ALAS/GAAS/ALAS RESONANT TUNNELING DIODE [J].
TSUCHIYA, M ;
SAKAKI, H ;
YOSHINO, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L466-L468