THE GROWTH OF GAAS/ALXGA1-XAS WITH DEALH-NME(3) AS AL SOURCE AND MEAS AND DMAAS AS LIQUID AS COMPOUNDS

We report on the growth of GaAs and AlGaAs with either MEAs (monoethylarsine) or DMAAs (trisdimethylaminoarsenic) as alternative group V compounds in combination with the Al source DEAlH-NMe(3) (diethyl-aluminiumhydride-trimethylamine adduct) and TEGa (triethylgallium). GaAs/AlGaAs layers grown with DEAlH-NMe(3), TEGa and AsH3 show very good electrical and optical properties. For example, the oxygen and carbon content in an Al0.29Ga0.71As layer is lower than the detection limit of the SIMS measurement (O: similar to 10(16) cm(-3); C: content similar to 10(15) cm(-3)). First multiple single quantum wells were grown with the Al source in combination with TEGa and AsH3. To enhance the safety of the growth process, experiments with the alternative As precursors DMAAs and MEAs were carried out. Growth studies of GaAs and AlGaAs with DMAAs as As source and TEGa and DEAlH-NMe(3) as group III precursors indicated undesired prereactions and make DMAAs unsuitable for the growth of Al containing layers. Using MEAs instead of AsH3, no indication of prereactions was found. Encouraging electrical and optical properties were achieved for the growth of GaAs (mu(77) = 39.100 cm(2)/V.s, n(77) = 7.1 X 10(14) cm(-3)) and AlGaAs (12 K PL FWHM = 11 meV for x(Al) = 0.30). Our results prove that the precursor combination MEAs, TEGa and DEAlH-NMe(3) is suitable for the growth of high quality GaAs/AlGaAs.