THIN-LAYER P-N-JUNCTION FABRICATION USING GA AND IN FOCUSED ION-BEAM IMPLANTATION

被引：5

作者：

LIN, CM

STECKL, AJ

CHOW, TP

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12181

[2] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.584291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：977 / 981

页数：5

共 14 条

[1]

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[3]

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[5]

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[6]

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[7] FABRICATION OF BIPOLAR-TRANSISTORS BY MASKLESS ION-IMPLANTATION [J].

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UTLAUT, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :290-294

[8] A NOVEL EPROM DEVICE FABRICATED USING FOCUSED BORON ION-BEAM IMPLANTATION [J].

SHUKURI, S ;

WADA, Y ;

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KOMORI, K ;

TAMURA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) :1264-1270

[9] PARTICLE-BEAM FABRICATION AND INSITU PROCESSING OF INTEGRATED-CIRCUITS [J].

STECKL, AJ .

PROCEEDINGS OF THE IEEE, 1986, 74 (12) :1753-1774

[10] FOCUSED ION-BEAM GALLIUM IMPLANTATION INTO SILICON [J].

TAMURA, M ;

SHUKURI, S ;

MONIWA, M ;

DEFAULT, M .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (03) :183-190

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