DIFFUSION IN SILICON .3. GENERATION OF EXCESS VACANCIES AT CLIMBING DIFFUSION-INDUCED DISLOCATIONS AND DISLOCATION-ENHANCED DIFFUSION IN (001) CRYSTALS

被引：10

作者：

PARKER, TJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 04期

关键词：

D O I：

10.1063/1.1656486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2043 / &

共 31 条

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