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LACK OF IMPORTANCE OF AMBIENT GASES ON PICOSECOND LASER-INDUCED PHASE-TRANSITIONS OF SILICON
被引:11
作者
:
LIU, JM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LIU, JM
[
1
]
YEN, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YEN, R
[
1
]
DONOVAN, EP
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
DONOVAN, EP
[
1
]
BLOEMBERGEN, N
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BLOEMBERGEN, N
[
1
]
HODGSON, RT
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HODGSON, RT
[
1
]
机构
:
[1]
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
:
APPLIED PHYSICS LETTERS
|
1981年
/ 38卷
/ 08期
关键词
:
D O I
:
10.1063/1.92454
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:617 / 619
页数:3
相关论文
共 9 条
[1]
CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
EISINGER, J
论文数:
0
引用数:
0
h-index:
0
EISINGER, J
HAGSTRUM, HD
论文数:
0
引用数:
0
h-index:
0
HAGSTRUM, HD
LAW, JT
论文数:
0
引用数:
0
h-index:
0
LAW, JT
[J].
JOURNAL OF APPLIED PHYSICS,
1959,
30
(10)
: 1563
-
1571
[2]
INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATION
HOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
HOH, K
KOYAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
KOYAMA, H
UDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
UDA, K
MIURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
MIURA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(07)
: L375
-
L378
[3]
INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS
KENNEDY, EF
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
KENNEDY, EF
CSEPREGI, L
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
CSEPREGI, L
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
MAYER, JW
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
SIGMON, TW
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(10)
: 4241
-
4246
[4]
PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI
LIU, PL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LIU, PL
YEN, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YEN, R
BLOEMBERGEN, N
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BLOEMBERGEN, N
HODGSON, RT
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HODGSON, RT
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(12)
: 864
-
866
[5]
LIU YS, 1981, LASER ELECTRON BEAM
[6]
ROBERTS RW, 1963, ULTRAHIGH VACUUM ITS, P3
[7]
ORDER-DISORDER TRANSITION IN SINGLE-CRYSTAL SILICON INDUCED BY PULSED UV LASER IRRADIATION
TSU, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
TSU, R
HODGSON, RT
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
HODGSON, RT
TAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
TAN, TY
BAGLIN, JE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
BAGLIN, JE
[J].
PHYSICAL REVIEW LETTERS,
1979,
42
(20)
: 1356
-
1358
[8]
WHITE CJ, COMMUNICATION
[9]
PREPARATION OF ATOMICALLY CLEAN SILICON SURFACES BY PULSED LASER IRRADIATION
ZEHNER, DM
论文数:
0
引用数:
0
h-index:
0
ZEHNER, DM
WHITE, CW
论文数:
0
引用数:
0
h-index:
0
WHITE, CW
OWNBY, GW
论文数:
0
引用数:
0
h-index:
0
OWNBY, GW
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(01)
: 56
-
59
←
1
→
共 9 条
[1]
CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
EISINGER, J
论文数:
0
引用数:
0
h-index:
0
EISINGER, J
HAGSTRUM, HD
论文数:
0
引用数:
0
h-index:
0
HAGSTRUM, HD
LAW, JT
论文数:
0
引用数:
0
h-index:
0
LAW, JT
[J].
JOURNAL OF APPLIED PHYSICS,
1959,
30
(10)
: 1563
-
1571
[2]
INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATION
HOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
HOH, K
KOYAMA, H
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
KOYAMA, H
UDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
UDA, K
MIURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
VLSI TECHNOL RES ASSOC,COOPERAT LABS,TAKATSU KU,KAWASAKI 213,JAPAN
MIURA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(07)
: L375
-
L378
[3]
INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS
KENNEDY, EF
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
KENNEDY, EF
CSEPREGI, L
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
CSEPREGI, L
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
MAYER, JW
SIGMON, TW
论文数:
0
引用数:
0
h-index:
0
机构:
CAL TECH,PASADENA,CA 91125
SIGMON, TW
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(10)
: 4241
-
4246
[4]
PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI
LIU, PL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
LIU, PL
YEN, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
YEN, R
BLOEMBERGEN, N
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
BLOEMBERGEN, N
HODGSON, RT
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HODGSON, RT
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(12)
: 864
-
866
[5]
LIU YS, 1981, LASER ELECTRON BEAM
[6]
ROBERTS RW, 1963, ULTRAHIGH VACUUM ITS, P3
[7]
ORDER-DISORDER TRANSITION IN SINGLE-CRYSTAL SILICON INDUCED BY PULSED UV LASER IRRADIATION
TSU, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
TSU, R
HODGSON, RT
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
HODGSON, RT
TAN, TY
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
TAN, TY
BAGLIN, JE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
BAGLIN, JE
[J].
PHYSICAL REVIEW LETTERS,
1979,
42
(20)
: 1356
-
1358
[8]
WHITE CJ, COMMUNICATION
[9]
PREPARATION OF ATOMICALLY CLEAN SILICON SURFACES BY PULSED LASER IRRADIATION
ZEHNER, DM
论文数:
0
引用数:
0
h-index:
0
ZEHNER, DM
WHITE, CW
论文数:
0
引用数:
0
h-index:
0
WHITE, CW
OWNBY, GW
论文数:
0
引用数:
0
h-index:
0
OWNBY, GW
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(01)
: 56
-
59
←
1
→