CONDUCTANCE TECHNIQUE IN MOSFETS - STUDY OF INTERFACE TRAP PROPERTIES IN THE DEPLETION AND WEAK INVERSION REGIMES

被引：67

作者：

HADDARA, HS ^{[1
]}

ELSAYED, M ^{[1
]}

机构：

[1] UNIV ALEXANDRIA, FAC ENGN, DEPT ELECT ENGN, ALEXANDRIA, EGYPT

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 08期

关键词：

D O I：

10.1016/0038-1101(88)90428-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES, MOSFET

引用

页码：1289 / 1298

页数：10

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