COMPARATIVE-STUDY OF THE SUBSTRATE-FILM INTERFACES OF GAAS GROWN BY 2 MOLECULAR-BEAM EPITAXIAL METHODS

被引：4

作者：

TAPPURA, K

SALOKATVE, A

RAKENNUS, K

ASONEN, H

PESSA, M

机构：

[1] Department of Physics, Tampere University of Technology, SF-33101 Tampere

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 22期

关键词：

D O I：

10.1063/1.103880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier concentration profiles in the region of a substrate-film homojunction for n- and p-type GaAs were studied using a capacitance-voltage carrier profiling technique. The GaAs films were grown on GaAs substrates by molecular beam epitaxy (MBE) and by gas-source molecular beam epitaxy (GSMBE). The GaAs homojunctions grown by MBE exhibited a much larger reduction in carrier concentration than those prepared by GSMBE. The highest quality interface, without an observable depletion region, was obtained when an additional hydrogen plasma was used during heat treatment prior to GSMBE growth.

引用

页码：2313 / 2314

页数：2

共 5 条

[1] ON THE POSSIBILITY OF MBE GROWTH INTERFACE MODIFICATION BY HYDROGEN [J].