ELIMINATION OF THE BEAM EFFECT ON CHANNELING DIPS OF BISMUTH IMPLANTED IN SILICON

被引：3

作者：

WAGH, AG

RADHAKRISHNAN, S

GAONKAR, SG

KANSARA, MJ

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1980年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(80)91252-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：191 / 194

页数：4

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