ACCOMMODATIONS AND INITIAL GROWTH-STAGES OF GAAS/GAP AND GAP/GAAS BY MBE

被引：3

作者：

NOMURA, T

MIYAO, M

ISHIKAWA, K

SUZUKI, Y

HAGINO, M

机构：

[1] Shizuoka Univ, Japan

来源：

APPLIED SURFACE SCIENCE | 1988年 / 33-4卷

关键词：

Crystals--Structure - Molecular Beam Epitaxy - Semiconductor Materials--Spectroscopic Analysis - Spectroscopy; Raman;

D O I：

10.1016/0169-4332(88)90432-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Initial growth stages and accommodation of the large lattice mismatch are studied in GaP/GaAs and GaAs/GaP growth by MBE. The initial growth stage is examined by RHEED and XPS. The strain caused by the lattice mismatch is measured by X-ray diffraction and Raman scattering. The identical growth mechanism is observed in both GaP and GaAs heteroepitaxial layers, although the strain caused by the mismatch is opposite. The Stranski-Krastanov growth mode is observed. About 85% of the lattice mismatch is accommodated during the nucleation. The generation of misfit dislocations decreases the strain as the islands coalesce.

引用

页码：1176 / 1182

页数：7

共 9 条

[1] RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS [J].