ANALYTIC CORRECTION OF EDGE EFFECTS IN ION-BEAM SPUTTERED DEPTH PROFILES

A numerical integration procedure based on theoretical analysis of the crater geometry removes the edge effects from depth profiles obtained by sputtering with a static and nonuniform ion beam. Parameters characterizing the beam and the detector follow from the depth profile of a standard sharp interface, e. g. , a SiO//2 film on silicon. These parameters then correct subsequent depth profiles of unknown interfaces sputtered by the same beam. The advantages of this approach are that no a priori knowledge of the beam current density distribution is required, and the mathematical treatment lends itself to computerization for on-line data processing.