ELIMINATION OF GROWN-IN DISLOCATIONS IN IN-DOPED LIQUID ENCAPSULATED CZOCHRALSKI GAAS

被引：20

作者：

YAMADA, K

KOHDA, H

NAKANISHI, H

HOSHIKAWA, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 78卷 / 01期

关键词：

D O I：

10.1016/0022-0248(86)90498-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：36 / 42

页数：7

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