CONTROL OF RESIDUAL IMPURITIES IN VERY HIGH-PURITY GAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：37

作者：

SHASTRY, SK

ZEMON, S

KENNESON, DG

LAMBERT, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.99034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：150 / 152

页数：3

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共 21 条

[1] SURFACE AND INTERFACE DEPLETION CORRECTIONS TO FREE CARRIER-DENSITY DETERMINATIONS BY HALL MEASUREMENTS
CHANDRA, A
WOOD, CEC
WOODARD, DW
EASTMAN, LF
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (07) : 645 - 650
[2] LOW COMPENSATION VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE
COLTER, PC
LOOK, DC
REYNOLDS, DC
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 282 - 284
[3] DONOR DISCRIMINATION AND BOUND EXCITON SPECTRA IN INP
DEAN, PJ
SKOLNICK, MS
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 346 - 359
[4] VAPOR GROWTH OF EPITAXIAL GAAS - SUMMARY OF PARAMETERS WHICH INFLUENCE PURITY AND MORPHOLOGY OF EPITAXIAL LAYERS
DILORENZO, JV
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 189 - +
[5] FIELD-DEPENDENT CENTRAL-CELL CORRECTIONS IN GAAS BY LASER SPECTROSCOPY
FETTERMAN, HR
LARSEN, DM
STILLMAN, GE
TENNENWA.PE
WALDMAN, J
[J]. PHYSICAL REVIEW LETTERS, 1971, 26 (16) : 975 - +
[6] REDUCTION OF THE ACCEPTOR IMPURITY BACKGROUND IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
LARKINS, EC
HELLMAN, ES
SCHLOM, DG
HARRIS, JS
KIM, MH
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (07) : 391 - 393
[7] HIGH PURITY GAAS CRYSTALS GROWN BY LIQUID PHASE EPITAXY
MIKI, H
OTSUBO, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (04) : 509 - &
[8] OZEKI M, 1979, I PHYSICS C SERIES, V45, P220
[9] ELECTRON-MOBILITY IN VAPOR-GROWN GAAS FILMS
POTH, H
BRUCH, H
HEYEN, M
BALK, P
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 285 - 288
[10] REYNOLDS DC, 1983, PHYS REV B, V28, P3300, DOI 10.1103/PhysRevB.28.3300