ANODIC PASSIVATION OF P-INP(100) IN (NH4)(2)S-X SOLUTION

被引：11

作者：

GAO, LJ ^{[1
]}

BARDWELL, JA ^{[1
]}

LU, ZH ^{[1
]}

GRAHAM, MJ ^{[1
]}

NORTON, PR ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT CHEM,LONDON,ON N6A 5B7,CANADA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 01期

关键词：

D O I：

10.1149/1.2043966

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

p-InP (100) was electrochemically sulfur passivated in (NH4)(2)S-x solution, and the resulting surfaces analyzed by XPS, AES, and SEM. It was found that one monolayer of sulfur adsorbed on the InP surface at potentials below 0.3 V (vs. SCE); while at potentials above 0.3 V, a 3-dimensional In2S3 layer was formed. Conditions for preparation of a continuous, 150 nm thick In2S3 passivating layer have been determined.

引用

页码：L14 / L16

页数：3

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