PHOTOINDUCED PARAMAGNETIC CENTERS IN AMORPHOUS-SILICON OXYNITRIDE

被引:20
作者
YOUNT, JT [1 ]
KRAUS, GT [1 ]
LENAHAN, PM [1 ]
KRICK, DT [1 ]
机构
[1] INTEL CORP,PORTLAND TECHNOL & DEV,HILLSBORO,OR 97124
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.349024
中图分类号
O59 [应用物理学];
学科分类号
摘要
Room-temperature metastable paramagnetic point defects are created in plasma-enhanced chemical vapor deposited silicon oxynitride films by exposing the films to ultraviolet and vacuum ultraviolet illumination. We compare the response of films with low, intermediate, and high oxygen content. The defects include unpaired electrons on silicons bonded to nitrogen atoms (K centers), unpaired electrons on bridging nitrogens, and what appear to be overcoordinated nitrogen centers.
引用
收藏
页码:4969 / 4972
页数:4
相关论文
共 25 条
[1]   JAHN-TELLER-DISTORTED NITROGEN DONOR IN LASER-ANNEALED SILICON [J].
BROWER, KL .
PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1627-1629
[2]   IDENTIFICATION OF A PARAMAGNETIC NITROGEN DANGLING BOND DEFECT IN NITRIDED SILICON DIOXIDE FILMS ON SILICON [J].
CHAIYASENA, IA ;
LENAHAN, PM ;
DUNN, GJ .
APPLIED PHYSICS LETTERS, 1991, 58 (19) :2141-2143
[3]   OPTICAL-PROPERTIES OF PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-OXYNITRIDE FILMS [J].
CROS, Y ;
ROSTAING, JC ;
PEISNER, J ;
LEVEQUE, G ;
ANCE, C .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4538-4544
[4]   PLASMA-ENHANCED GROWTH AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J].
DENISSE, CMM ;
TROOST, KZ ;
ELFERINK, JBO ;
HABRAKEN, FHPM ;
VANDEWEG, WF ;
HENDRIKS, M .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2536-2542
[5]   ANNEALING OF PLASMA SILICON OXYNITRIDE FILMS [J].
DENISSE, CMM ;
TROOST, KZ ;
HABRAKEN, FHPM ;
VANDERWEG, WF ;
HENDRIKS, M .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2543-2547
[6]   AN ELECTRON-SPIN-RESONANCE STUDY OF THE STRUCTURE OF PLASMA-DEPOSITED SILICON-OXYNITRIDE FILMS [J].
DENISSE, CMM ;
JANSSEN, JFM ;
HABRAKEN, FHPM ;
VANDERWEG, WF ;
SCHUIVENS, EGP .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :832-836
[7]   ELECTRON HEATING IN SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS [J].
DIMARIA, DJ ;
ABERNATHEY, JR .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1727-1729
[8]   DEFECTS IN AMORPHOUS INSULATORS [J].
GRISCOM, DL .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 31 (1-2) :241-266
[9]   PROPERTIES OF SILICON OXYNITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD [J].
HIRAO, T ;
SETSUNE, K ;
KITAGAWA, M ;
KAMADA, T ;
OHMURA, T ;
WASA, K ;
IZUMI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L21-L23
[10]  
Jousse D., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V946, P227