LOW THRESHOLD CURRENT GAAS ALGAAS GRIN-SCH LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI3N4 MASKED SUBSTRATES

被引：3

作者：

MEIER, HP

VANGIESON, E

WALTER, W

HARDER, C

BUCHMANN, P

WEBB, D

MOSER, A

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 18期

关键词：

D O I：

10.1049/el:19880764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1123 / 1125

页数：3

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