HIGH-QUALITY RAPID THERMAL ANNEALING OF INP AND GAAS SUBSTRATES UNDER LOW-PRESSURE TERTIARYBUTYLPHOSPHINE AND TERTIARYBUTYLARSINE AMBIENTS

High quality rapid thermal annealing of InP and GaAs at elevated temperatures was achieved in a load-locked rapid-thermal-low-pressure-metalorganic-chemical-vapor deposition (RT-LPMOCVD) reactor, under phosphorus and arsenic controlled ambient, using tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBA) organometallic liquid sources. Damage-free surfaces of InP and GaAs were obtained for temperatures up to 700-degrees-C for InP under TBP ambient, or above 900-degrees-C for GaAs under TBA ambient, respectively. Annealing the III-V substrates at low protective ambient pressure (50 mTorr) provided an excellent surface protection through the heating cycle without resulting in deposition of the group-V elements on the surface and without reducing the efficiency of the process.