INFLUENCE OF OXIDE THICKNESS NONUNIFORMITIES ON THE TUNNEL CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF THE METAL-OXIDE-SEMICONDUCTOR SYSTEM

被引：35

作者：

MAJKUSIAK, B ^{[1
]}

STROJWAS, A ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV, DEPT ELECT & COMP ENGN, PITTSBURGH, PA 15213 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.355307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model is presented for the tunnel current-gate-voltage and high-frequency-capacitance-gate-voltage characteristics of a metal-oxide-semiconductor system with a very thin and nonuniform oxide layer. Assuming the Gaussian distribution of the oxide thickness nonuniformities, their influence on the electrical characteristics of the Al-SiO2-Si(n) system is analyzed theoretically.

引用

页码：5638 / 5647

页数：10

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