GRAIN-GROWTH OF POLYCRYSTALLINE SILICON FILMS ON SIO2 BY CW SCANNING ELECTRON-BEAM ANNEALING

被引：11

作者：

SHIBATA, K ^{[1
]}

INOUE, T ^{[1
]}

TAKIGAWA, T ^{[1
]}

YOSHII, S ^{[1
]}

机构：

[1] TOSHIBA CORP,TOSHIBA SEMICONDUCTOR DEVICE ENGN LAB,72 HORIKAWA CHO,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.92839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：645 / 647

页数：3

共 11 条

[1] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS
FAN, JCC
GEIS, MW
TSAUR, BY
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367
[2] CRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY ND-YAG LASER-HEATING
FAN, JCC
ZEIGER, HJ
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 224 - 226
[3] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION
GEIS, MW
FLANDERS, DC
SMITH, HI
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74
[4] GRAPHO-EPITAXY OF SILICON ON FUSED-SILICA USING SURFACE MICROPATTERNS AND LASER CRYSTALLIZATION
GEIS, MW
FLANDERS, DC
SMITH, HI
ANTONIADIS, DA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1640 - 1643
[5] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES
GIBBONS, JF
LEE, KF
MAGEE, TJ
PENG, J
ORMOND, R
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 831 - 833
[6] LASER FABRICATION OF LARGE-AREA ARRAYS - THIN-FILM SILICON ISOLATED DEVICES ON FUSED SILICA SUBSTRATES
LAFF, RA
HUTCHINS, GL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 743 - 743
[7] LAM HW, UNPUBLISHED
[8] SEEDED AND LIMITED SEEDING REGROWTH OF SI OVER SIO2 BY CW LASER ANNEALING
MAGEE, TJ
PALKUTI, LJ
ORMOND, R
LEUNG, C
GRAHAM, S
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 248 - 250
[9] MODELING OF BEAM VOLTAGE EFFECTS IN ELECTRON-BEAM ANNEALING
NEUKERMANS, A
SAPERSTEIN, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1847 - 1852
[10] REGOLINI JL, 1980, LASER ELECTRON BEAM, P297

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