LIQUID-PHASE EPITAXIAL-GROWTH OF INAS1-X-YPXSBY ON INAS SUBSTRATE

被引：14

作者：

KOBAYASHI, N

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 12期

关键词：

D O I：

10.1143/JJAP.20.2301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2301 / 2305

页数：5

共 13 条

[1] LIQUID-PHASE EPITAXY OF INXGA1-XAS [J].

ANTYPAS, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) :1393-&

[2] ORGANOMETALLIC VPE GROWTH OF INAS1-X-YSBXPY ON INAS [J].

FUKUI, T ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :587-591

[3] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285

[4]

IREGEMS M, 1974, J PHYS CHEM SOLIDS, V35, P409

[5] DH LASERS FABRICATED BY NEW III-V SEMICONDUCTOR MATERIAL INASPSB [J].

KOBAYASHI, N ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L641-L644

[6] ROOM-TEMPERATURE OPERATION OF THE INGAASSB-ALGAASSB DH LASER AT 1.8 MU-M WAVELENGTH [J].

KOBAYASHI, N ;

HORIKOSHI, Y ;

UEMURA, C .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L30-L32

[7] 1.5 MU-M INGAASP-INP DH LASER WITH OPTICAL-WAVEGUIDE STRUCTURE [J].

KOBAYASHI, N ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) :1005-1006

[8] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASSB-GASB AND INGAASSB-ALGAASSB DH WAFERS [J].

KOBAYASHI, N ;

HORIKOSHI, Y ;

UEMURA, C .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) :2169-2170

[9]

KOBAYASHI N, 1981, UNPUB JPN J APPL PHY, V20

[10]

PANISH MB, 1972, PROGR SOLID STATE CH, V7

← 1 2 →