STRUCTURE OF LPCVD TUNGSTEN FILMS FOR IC APPLICATIONS

[1] BLOCHER JM, 1982, DEPOSITION TECHNOLOG, P358

[2] EFFECT OF INSULATOR SURFACE ON SELECTIVE DEPOSITION OF CVD TUNGSTEN FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1214 - 1217

[3] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1427 - 1433

[4] CAMPBELL DS, 1966, BASIC PROBLEMS THIN, P227

[5] OPTICAL EVALUATION OF POLYCRYSTALLINE SILICON SURFACE-ROUGHNESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2267 - 2269

[6] CULLITY BD, 1956, ELEMENTS XRAY DIFFRA, P270

[7] GRAY DE, 1972, AM I PHYSICS HDB, P6

[8] GRAY DE, 1972, AM I PHYSICS HDB

[9] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1243 - 1250

[10] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) : 83 - &

[1] BLOCHER JM, 1982, DEPOSITION TECHNOLOG, P358

[2] EFFECT OF INSULATOR SURFACE ON SELECTIVE DEPOSITION OF CVD TUNGSTEN FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1214 - 1217

[3] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : 1427 - 1433

[4] CAMPBELL DS, 1966, BASIC PROBLEMS THIN, P227

[5] OPTICAL EVALUATION OF POLYCRYSTALLINE SILICON SURFACE-ROUGHNESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2267 - 2269

[6] CULLITY BD, 1956, ELEMENTS XRAY DIFFRA, P270

[7] GRAY DE, 1972, AM I PHYSICS HDB, P6

[8] GRAY DE, 1972, AM I PHYSICS HDB

[9] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1243 - 1250

[10] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) : 83 - &