SELECTIVE METALORGANIC REACTIVE ION ETCHING OF MOLECULAR-BEAM EPITAXY GAAS/ALXGA1-XAS

被引：7

作者：

LAW, VJ ^{[1
]}

JONES, GAC ^{[1
]}

RITCHIE, DA ^{[1
]}

PEACOCK, DC ^{[1
]}

FROST, JEF ^{[1
]}

机构：

[1] GEC LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1479 / 1482

页数：4

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