THE TEMPERATURE-DEPENDENCE OF THE CONTACT RESISTIVITY OF THE SI/NI(MG) NONSPIKING CONTACT SCHEME ON P-GAAS

被引：7

作者：

HAN, CC ^{[1
]}

WANG, XZ ^{[1
]}

LAU, SS ^{[1
]}

POTEMSKI, RM ^{[1
]}

TISCHLER, MA ^{[1
]}

KUECH, TF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 05期

关键词：

D O I：

10.1063/1.348579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the contact resistivity of the Si/Ni (Mg) nonspiking contact scheme on p-GaAs has been investigated. This contact schemes has been shown to form planar contact interfaces with contact resistivities less than 1 x 10(-6) OMEGA cm2. This investigation demonstrates that the contact resistivity can be modeled by a sum of two components in series: (i) a contact resistivity due to the metal-GaAs interface and (ii) a contact resistivity due to the high-low junction formed between the highly doped regrown GaAs layer and the substrate. For degenerately doped samples (4.5 x 10(19) cm-3), the contact resistivity is nearly independent of the temperature from 300 to about 30 K, indicating that the dominant resistivity is that across the metal-semiconductor tunneling barrier. For samples with lower doping concentrations (less-than-or-equal-to 1.5 x 10(18) cm-3), the contact resistivity increases with decreasing temperature, suggesting the dominance of the contact resistivity due to the high-low junction.

引用

页码：3124 / 3129

页数：6

共 23 条

[11] TRANSPORT ACROSS A HIGH-LOW BARRIER AND ITS INFLUENCE ON SPECIFIC CONTACT RESISTIVITY OF A METAL-N-GAAS OHMIC SYSTEM [J].