LOW-RESISTANCE NONSPIKING OHMIC CONTACT FOR ALGAAS GAAS HIGH ELECTRON-MOBILITY TRANSISTORS USING THE GE/PD SCHEME

被引:55
作者
WANG, LC [1 ]
LAU, SS [1 ]
HSIEH, EK [1 ]
VELEBIR, JR [1 ]
机构
[1] TRW,ELECTR SYST GRP,CTR MICROWAVE & MILLIMETER WAVE TECHNOL,REDONDO BEACH,CA 90278
关键词
D O I
10.1063/1.101032
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2677 / 2679
页数:3
相关论文
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