THE FABRICATION OF EPITAXIAL GEXSI1-X LAYERS BY ION-IMPLANTATION

被引：21

作者：

ELLIMAN, RG

WONG, WC

机构：

[1] Electronic Materials Engineering Department, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 2601

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷

关键词：

D O I：

10.1016/0168-583X(93)90678-Y

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Time-resolved reflectivity and Rutherford backscattering and channelling spectrometry have been combined to study solid-phase epitaxial growth of Ge implanted (100) Si. Analysis shows that high quality epitaxial GexSi1-x alloy layers can be fabricated in this manner for implant fluences below a critical value, in good agreement with theoretical predictions. For thick alloy layers fabricated by high energy (800 keV) implantation, time-resolved reflectivity shows that the solid phase epitaxial growth rate varies in a complex manner which is consistent with strain relaxation processes occurring during epitaxy.

引用

页码：768 / 772

页数：5

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