LASER-INDUCED EPITAXIAL REGROWTH OF SI1-XGEX/SI LAYERS PRODUCED BY GE ION-IMPLANTATION

被引：9

作者：

BERTI, M

MAZZI, G

DRIGO, AV

MIGLIORI, A

JANNITTI, E

NICOLETTI, S

机构：

[1] DIPARTIMENTO SCI MAT,UNITA CISM,GNSM,I-73100 LECCE,ITALY

[2] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY

[3] AUR EL SPA,I-47015 FORLI,ITALY

[4] CNR,IST GAS IONIZZATI,I-35100 PADUA,ITALY

来源：

APPLIED SURFACE SCIENCE | 1989年 / 43卷

关键词：

D O I：

10.1016/0169-4332(89)90205-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：158 / 164

页数：7

共 12 条

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