NANOSCALE OXIDE PATTERNS ON SI(100) SURFACES

被引：53

作者：

SHEN, TC ^{[1
]}

WANG, C ^{[1
]}

LYDING, JW ^{[1
]}

TUCKER, JR ^{[1
]}

机构：

[1] UNIV ILLINOIS,BECKMAN INST,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.113817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrathin oxide patterns of a linewidth of 50 Å have been created on Si(100)-2×1 surfaces by a scanning tunneling microscope operating in ultrahigh vacuum. The oxide thickness is estimated to be 4-10 Å. The morphology and spectroscopy of the oxide region are obtained. Hydrogen passivation is used as an oxidation mask. The defects caused by oxidation in the passivated region before and after the hydrogen desorption are compared and discussed. The multistep silicon processings by an ultrahigh vacuum scanning tunneling micropscope is thus demonstrated.© 1995 American Institute of Physics.

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页码：976 / 978

页数：3

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