ION PROJECTION LITHOGRAPHY FOR SUBMICRON MODIFICATION OF MATERIALS

[11] DRESSELHAUS MS, 1983, MATER RES SOC S P, V27, P413

[12] HIGH-RESISTIVITY IN INP BY HELIUM BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3859 - 3862

[13] FOTI G, 1984, INDUCED DEFECTS INSU

[14] ALIGNED MULTILAYER STRUCTURE GENERATION BY ELECTRON MICRO-PROJECTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1827 - 1829

[15] NITROCELLULOSE AS A POSITIVE OR NEGATIVE SELF-DEVELOPING RESIST [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 343 - 346

[16] FOCUSED ION-BEAM ETCHING OF RESIST MATERIALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 355 - 357

[17] HEILMEIER GH, 1984, IEDM 1984

[18] HEUBERGER A, 1986, SOLID STATE TECHNOL, V29, P93

[19] DIFFERENTIAL ETCHING OF ION-IMPLANTED GARNET [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4753 - 4757

[20] ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1259 - 1263

[11] DRESSELHAUS MS, 1983, MATER RES SOC S P, V27, P413

[12] HIGH-RESISTIVITY IN INP BY HELIUM BOMBARDMENT [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3859 - 3862

[13] FOTI G, 1984, INDUCED DEFECTS INSU

[14] ALIGNED MULTILAYER STRUCTURE GENERATION BY ELECTRON MICRO-PROJECTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1827 - 1829

[15] NITROCELLULOSE AS A POSITIVE OR NEGATIVE SELF-DEVELOPING RESIST [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01): : 343 - 346

[16] FOCUSED ION-BEAM ETCHING OF RESIST MATERIALS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 355 - 357

[17] HEILMEIER GH, 1984, IEDM 1984

[18] HEUBERGER A, 1986, SOLID STATE TECHNOL, V29, P93

[19] DIFFERENTIAL ETCHING OF ION-IMPLANTED GARNET [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4753 - 4757

[20] ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1259 - 1263