INSITU IR SPECTROSCOPIC STUDY OF A-SI-H FILMS GROWING UNDER PHOTO-CHEMICAL VAPOR-DEPOSITION CONDITION

被引:46
作者
WADAYAMA, T [1 ]
SUETAKA, W [1 ]
SEKIGUCHI, A [1 ]
机构
[1] ANELVA CORP,TOKYO 183,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 04期
关键词
D O I
10.1143/JJAP.27.501
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:501 / 505
页数:5
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