PHOTOELECTRIC PROPERTIES OF OXYGEN-DOPED A-SI-H PREPARED BY RF-SPUTTERING

被引：8

作者：

JIRANAPAKUL, K

SHIRAKAWA, K

SHIRAFUJI, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 10期

关键词：

D O I：

10.1143/JJAP.25.1457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1457 / 1464

页数：8

共 32 条

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