DIRECT MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE(100) AND CDZNTE(100)/ZNTE(100) ON SI(100) SUBSTRATES

被引：24

作者：

DELYON, TJ ^{[1
]}

ROTH, JA ^{[1
]}

WU, OK ^{[1
]}

JOHNSON, SM ^{[1
]}

COCKRUM, CA ^{[1
]}

机构：

[1] SANTA BARBARA RES CTR,GOLETA,CA 93117

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 06期

关键词：

D O I：

10.1063/1.109918

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial structures of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular-beam epitaxy onto Si(100) substrates misoriented from 0-degrees to 8-degrees towards the [011] direction. The films were characterized with x-ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Single-crystal CdZnTe(100) films comparable in structural quality to those obtained with growth on GaAs/Si composite substrates have been demonstrated on both 4-degrees and 8-degrees misoriented Si with the use of ZnTe buffer layers. X-ray rocking curves with FWHM less than 300 arcsec for ZnTe (400) and less than 160 arcsec for CdZnTe(400) have been obtained for as-grown films. Specular surface morphologies, superior to those obtained on GaAs/Si composite substrates, are also observed.

引用

页码：818 / 820

页数：3

共 18 条

[1] DISLOCATION DENSITY REDUCTION BY THERMAL ANNEALING OF HGCDTE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES [J].