EPITAXIAL-GROWTH OF BETA-SIC ON TICX BY REACTIVE EVAPORATION

被引：3

作者：

PARSONS, JD ^{[1
]}

BUNSHAH, RF ^{[1
]}

STAFSUDD, OM ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES, SCH ENGN & APPL SCI, LOS ANGELES, CA 90024 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 06期

关键词：

D O I：

10.1149/1.2221637

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A parametric growth study was performed to determine optimum conditions for epitaxial growth of beta-SiC on TiC(x) by reactive evaporation. The growth sources were E-beam evaporated Si and acetylene. The polycrystalline to epitaxial growth transition temperature was determined to be about 1250-degrees-C, and the optimum epitaxial growth temperature was about 1400-degrees-C. All beta-SiC epilayers exhibited an n-type carrier concentration of about 2 X 10(18), independent of growth conditions, due to the high concentration of nitrogen in the acetylene. The Ti concentration ([Ti]) at the beta-SiC/TiC(x) epitaxial interface was graded, due to Ti diffusion during epitaxial growth. The as-grown [Ti] profile at the beta-SiC/TiC(x) interface was stable at 500-degrees-C. However, the [Ti] profile, ion implanted into a beta-SiC epilayer, changed appreciably at 500-degrees-C.

引用

页码：1756 / 1762

页数：7

共 34 条

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].

ADDAMIANO, A ;

SPRAGUE, JA .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :525-527

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[3]

DUNN GL, 1979, THESIS UCLA

[4] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1975, 12 (06) :2361-2369

[5] EPITAXIAL-GROWTH OF 3C-SIC ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

FUJIWARA, Y ;

SAKUMA, E ;

MISAWA, S ;

ENDO, K ;

YOSHIDA, S .

APPLIED PHYSICS LETTERS, 1986, 49 (07) :388-390

[6]

JACKSON D, 1966, 4608 PROJ

[7] BETA-SIC MESFETS AND BURIED-GATE JFETS [J].

KELNER, G ;

BINARI, S ;

SLEGER, K ;

KONG, H .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (09) :428-430

[8]

KEYS RW, 1973, 3RD P INT C SIC, P534

[9]

KEYS RW, 1969, AM PHYS SOC B S, P12

[10] GROWTH-RATE, SURFACE-MORPHOLOGY, AND DEFECT MICROSTRUCTURES OF BETA-SIC FILMS CHEMICALLY VAPOR-DEPOSITED ON 6H-SIC SUBSTRATES [J].

KONG, HS ;

GLASS, JT ;

DAVIS, RF .

JOURNAL OF MATERIALS RESEARCH, 1989, 4 (01) :204-214

← 1 2 3 4 →