SURFACE-CHARGE CONTROL DURING HIGH-CURRENT ION-IMPLANTATION - CHARACTERIZATION WITH CHARM-2 SENSORS

被引：7

作者：

CURRENT, MI

LUKASZEK, W

VELLA, MC

TRIPSAS, NH

机构：

[1] WAFER CHARGING MONITORS,WOODSIDE,CA 94062

[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[3] ADV MICRO DEVICES INC,SUNNYVALE,CA 94088

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00449-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Studies of the charging effects during implantation with 9200 and 9500 tools using EEPROM-based sensors, CHARM-2, are reported for 60 keV As beams.

引用

页码：34 / 38

页数：5

共 21 条

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