CONTROL OF SURFACE CHARGING DURING HIGH-CURRENT ION-IMPLANTATION

被引：16

作者：

CURRENT, MI ^{[1
]}

BHATTACHARYYA, A ^{[1
]}

KHID, M ^{[1
]}

机构：

[1] PHILIPS RES LAB,SUNNYVALE,CA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90245-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：555 / 558

页数：4

共 22 条

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[7] CHARGING STUDIES IN APPLIED MATERIALS PRECISION IMPLANT 9000 SYSTEM [J].

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[9] SECONDARY-ELECTRON EMISSION DURING ION-IMPLANTATION [J].

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[10]

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