FABRICATION TECHNOLOGIES FOR III-V COMPOUND SEMICONDUCTOR PHOTONIC AND ELECTRONIC DEVICES

被引：6

作者：

DAUTREMONTSMITH, WC

MCCOY, RJ

BURTON, RH

BACA, AG

机构：

[1] AT&T BELL LABS,DEPT CHEM PROC & CONTROL & AUTOMAT DEV,CHEM PROC GRP,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,DEPT GAAS INTEGRATED CIRCUIT FOUNDRY SUPPORT,READING,PA

来源：

AT&T TECHNICAL JOURNAL | 1989年 / 68卷 / 01期

关键词：

D O I：

10.1002/j.1538-7305.1989.tb00647.x

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：64 / 82

页数：19

共 12 条

[1] PACKAGING TECHNOLOGY FOR III-V-PHOTONIC DEVICES AND INTEGRATED-CIRCUITS [J].

ALLES, DS ;

BRADY, KJ .

AT&T TECHNICAL JOURNAL, 1989, 68 (01) :83-92

[2]

BURTON RH, 1984, DRY ETCHING MICROELE

[3]

CHAKRABARTI UK, 1988, Patent No. 4749255

[4] BULK III-V COMPOUND SEMICONDUCTOR CRYSTAL-GROWTH [J].

CLEMANS, JE ;

EJIM, TI ;

GAULT, WA ;

MONBERG, EM .

AT&T TECHNICAL JOURNAL, 1989, 68 (01) :29-42

[5]

DAUTREMONTSMITH WC, 1988, MRS S P, V104

[6]

DAUTREMONTSMITH WC, 1988, SEMICONDUCTOR MATERI

[7] LIGHTWAVE DEVICE TECHNOLOGY [J].

DIXON, RW ;

DUTTA, NK .

AT&T TECHNICAL JOURNAL, 1987, 66 (01) :73-83

[8] III-V DEVICE TECHNOLOGIES FOR LIGHTWAVE APPLICATIONS [J].

DUTTA, NK .

AT&T TECHNICAL JOURNAL, 1989, 68 (01) :5-18

[9] LIQUID AND VAPOR-PHASE GROWTH OF III-V MATERIALS FOR PHOTONIC DEVICES [J].

JOHNSTON, WD ;

DIGIUSEPPE, MA ;

WILT, DP .

AT&T TECHNICAL JOURNAL, 1989, 68 (01) :53-63

[10] MOLECULAR-BEAM EPITAXY [J].

PANISH, MB .

AT&T TECHNICAL JOURNAL, 1989, 68 (01) :43-52

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