MOLECULAR-BEAM EPITAXY

被引：6

作者：

PANISH, MB

机构：

[1] AT&T Bell Lab, United States

来源：

AT&T TECHNICAL JOURNAL | 1989年 / 68卷 / 01期

关键词：

29;

D O I：

10.1002/j.1538-7305.1989.tb00645.x

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：43 / 52

页数：10

共 29 条

[1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J].

ARTHUR, JR ;

LEPORE, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :545-&

[2] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].

ARTHUR, JR .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&

[3]

CHANG LL, 1985, NATO ASI SERIES E, V87

[4]

CHEN YK, IN PRESS IEEE ELECTR

[5] FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES [J].

CHO, AY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :S31-&

[6] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2780-&

[7]

CHO AY, 1971, 3RD P INT S GAAS, P18

[8] EPITAXIAL GAAS FILMS DEPOSITED BY VACUUM EVAPORATION [J].

DAVEY, JE ;

PANKEY, T .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :1941-&

[9]

FARR TD, 1950, 8 TENN VALL AUTH CHE

[10] INTERACTION KINETICS OF AS2 AND GA ON [100] GAAS SURFACES [J].

FOXON, CT ;

JOYCE, BA .

SURFACE SCIENCE, 1977, 64 (01) :293-304

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