MOLECULAR-BEAM EPITAXY

被引：6

作者：

PANISH, MB

机构：

[1] AT&T Bell Lab, United States

来源：

AT&T TECHNICAL JOURNAL | 1989年 / 68卷 / 01期

关键词：

29;

D O I：

10.1002/j.1538-7305.1989.tb00645.x

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：43 / 52

页数：10

共 29 条

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[27] VERY LOW CURRENT THRESHOLD GAAS/AL0.5GA0.5AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :511-513

[28] INGAAS/INP P-I-N PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

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APPLIED PHYSICS LETTERS, 1986, 48 (21) :1416-1418

[29] METALORGANIC CVD OF GAAS IN A MOLECULAR-BEAM SYSTEM [J].

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