ELECTROMIGRATION EARLY-FAILURE DISTRIBUTION

被引：12

作者：

HOANG, HH

NIKKEL, EL

MCDAVID, JM

MACNAUGHTON, RB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.343038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1044 / 1047

页数：4

共 14 条

[1] MEASUREMENT OF STRESS GRADIENTS GENERATED BY ELECTROMIGRATION [J].

BLECH, IA ;

TAI, KL .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :387-389

[2] STRESS GENERATION BY ELECTROMIGRATION [J].

BLECH, IA ;

HERRING, C .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :131-133

[3]

HOANG HH, 1987, SOLID STATE TECHNOL, V30, P121

[4] ELECTROMIGRATION LIFETIME STUDIES OF SUBMICROMETER-LINEWIDTH AL-CU CONDUCTORS [J].

IYER, SS ;

TING, CY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) :1468-1471

[5]

KWOK T, 1988, 5TH P VLSI MULT INT, P436

[6]

LaCombe D. J., 1986, 24th Annual Proceedings Reliability Physics 1986 (Cat. No.86CH2256-6), P1, DOI 10.1109/IRPS.1986.362103

[7]

LEARN AJ, 1971, 9 P ANN IEEE REL PHY, P129

[8]

Levine E., 1984, 22nd Annual Proceedings on Reliability Physics 1984 (Catalog No. 84CH1990-1), P242, DOI 10.1109/IRPS.1984.362053

[9] GRAIN-BOUNDARY AND VACANCY DIFFUSION-MODEL FOR ELECTROMIGRATION-INDUCED DAMAGE IN THIN-FILM CONDUCTORS [J].

LLOYD, JR ;

NAKAHARA, S .

THIN SOLID FILMS, 1980, 72 (03) :451-456

[10] LOG-NORMAL DISTRIBUTION OF ELECTROMIGRATION LIFETIMES [J].

LLOYD, JR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5062-5064

← 1 2 →