HEAVY DOPING EFFECTS IN P-N-P BIPOLAR-TRANSISTORS

被引：100

作者：

TANG, DD

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 03期

关键词：

D O I：

10.1109/T-ED.1980.19899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：563 / 570

页数：8

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