OXIDATION SITE OF POLYCRYSTALLINE SILICON SURFACE STUDIED USING SCANNING FORCE TUNNELING MICROSCOPE (AFM STM) IN AIR

被引：8

作者：

SUGAWARA, Y

FUKANO, Y

NAKANO, A

IDA, T

MORITA, S

机构：

[1] SHARP CO LTD,CTR ANAL,VLSI DEV LABS,IC GRP,TENRI 632,JAPAN

[2] IWATE UNIV,FAC ENGN,DEPT ELECTR ENGN,MORIOKA,IWATE 020,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 6A期

关键词：

POLYSILICON; AFM STM; AFM (ATOMIC FORCE MICROSCOPE); TUNNELING CURRENT; CURRENT IMAGE; OXIDATION; AFM TOPOGRAPH;

D O I：

10.1143/JJAP.31.L725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxidation site of the polysilicon surface was studied using a scanning force/tunneling microscope in air. In the case of a polysilicon surface without an oxidation annealing process, the tunneling conductance at the grain boundary decreased faster than that far from the grain boundary. As a result, we confirmed that the area at the grain boundary was preferentially oxidized. On the other hand, in the case of a polysilicon surface with oxidation annealing process, we confirmed that the preferential oxidation of the grain boundary was suppressed.

引用

页码：L725 / L727

页数：3

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