AN X-RAY TOPOGRAPHIC STUDY OF BETA-SIC FILMS ON SI SUBSTRATES

被引：6

作者：

FATEMI, M

NORDQUIST, PER

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.338033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1883 / 1890

页数：8

共 18 条

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[9] THERMAL-STRESSES IN HETEROEPITAXIAL BETA SILICON-CARBIDE THIN-FILMS GROWN ON SILICON SUBSTRATES [J].

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