SURFACE PHYSICS IN SILICON MOLECULAR-BEAM EPITAXY

被引：11

作者：

HIMPSEL, FJ

MORAR, JF

YARMOFF, JA

机构：

[1] IBM Thomas J. Watson Research Cent, United States

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 11期

关键词：

Microscopic Examination - Molecular Beam Epitaxy - Spectroscopy--Applications;

D O I：

10.1149/1.2095445

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A microscopic picture of heteroepitaxy on silicon is obtained using surface techniques such as photoelectron spectroscopy. From core level measurements, the bonding at the interface is established. Furthermore, it is possible to detect the valence orbitals that hold the interface together. Dramatic changes in the electronic properties (e.g., the bandgap) are seen for the layer adjacent to the interface. Using such microscopic information, the effect of various surface treatments (passivation by overlayers, activation by irradiation) on epitaxial growth is understood. Examples include the CaF2/Si, SiO2/Si, and SrO/Si interfaces.

引用

页码：2844 / 2848

页数：5

共 27 条

[1]

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[6] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

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PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

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[8] PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J].

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[9]

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BIEGELSEN, DK ;

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APPLIED PHYSICS LETTERS, 1983, 43 (06) :563-565

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