FABRICATION OF GAAS FINE STRIPE STRUCTURES BY SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING DIETHYLGALLIUMCHLORIDE

被引：15

作者：

YAMAGUCHI, K

OKAMOTO, K

机构：

[1] Department of Electronic Engineering, University of Electro-Communications, Chofuga-oka, Chofu-shi

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 27期

关键词：

D O I：

10.1063/1.105638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective GaAs fine stripe structures, aligned along <011> direction, were grown by atmospheric-pressure metalorganic chemical vapor deposition using diethylgalliumchloride. The width of the (100) top surface of the triangle-shaped selective epilayers could be changed from 0 to 25 nm by controlling the growth temperature, and was independent of the growth time. This phenomena can be explained by reevaporation enhancement effect of reactant species containing chloride and two-dimensional nucleation.

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页码：3580 / 3582

页数：3

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