POTENTIALITY AND CHALLENGE OF METAL-ORGANIC MOLECULAR-BEAM EPITAXY

被引：11

作者：

HEINECKE, H

机构：

[1] Siemens Research Laboratories, D-8000 München 83

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90153-M

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The method of metal-organic molecular beam epitaxy (MOMBE, or chemical beam epitaxy (CBE)) is basically the metal-organic vapour phase epitaxy (MOVPE) process carried out at extremely low pressures. Layers and device structures of group III-V elements have been grown by MOMBE that are of excellent quality and uniformity with regard to layer thickness and material composition. A striking feature is the superior selectivity of the growth process, opening new possibilities for the integration of electronic and optoelectronic devices. However, since MOMBE is a very recent epitaxial method it needs further development in the area of doping and in tailoring of starting materials particularly designed for MOMBE applications.

引用

页码：83 / 91

页数：9

共 54 条

[1] CARBON DOPING OF III-V-COMPOUNDS GROWN BY MOMBE [J].