INFRARED ELLIPSOMETRY STUDY OF THE THICKNESS-DEPENDENT VIBRATION FREQUENCY-SHIFTS IN SILICON DIOXIDE FILMS

被引：32

作者：

OSSIKOVSKI, R ^{[1
]}

DREVILLON, B ^{[1
]}

FIRON, M ^{[1
]}

机构：

[1] ECOLE NATL SUPER CHIM, CHIM PHYS LAB, F-75231 PARIS 05, FRANCE

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION | 1995年 / 12卷 / 08期

关键词：

D O I：

10.1364/JOSAA.12.001797

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Spectra of thermally grown amorphous SiO2 (alpha-SiO2) films upon a silicon wafer with thicknesses ranging from 12 to 647 nm were measured with an infrared phase-modulated ellipsometer. The observed shifts of the transverse-optical- and longitudinal-optical-mode frequencies of the Si-O bond stretching vibration as functions of the films thickness are shown to be pure optical effects. These shifts are described in terms of the classical electromagnetic theory. The characteristic features of this optical phenomenon are discussed in detail. A method for analytical elimination of this thickness-dependent line shift is proposed.

引用

页码：1797 / 1804

页数：8

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