DEEP RADIATIVE LEVELS IN AS-GROWN AND IMPLANTED RAPID THERMAL ANNEALED INP

被引：19

作者：

RAO, MV

AINA, OA

FATHIMULLA, A

THOMPSON, PE

机构：

[1] BENDIX AEROSP TECHNOL CTR,COLUMBIA,MD 21045

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2426 / 2433

页数：8

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