EXCIMER LASER-INDUCED MELTING OF HEAVILY DOPED SILICON - A CONTRIBUTION TO THE OPTIMIZATION OF THE LASER DOPING PROCESS

被引：5

作者：

FOGARASSY, E

FUCHS, C

DEUNAMUNO, S

SIFFERT, P

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 43卷

关键词：

D O I：

10.1016/0169-4332(89)90232-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：316 / 320

页数：5

共 10 条

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[6] UV LASER INCORPORATION OF DOPANTS INTO SILICON - COMPARISON OF 2 PROCESSES [J].

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[7]

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[10] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

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