INTERFACIAL CHARGE AND ITS EFFECTS ON MOBILITY AND CARRIER CONCENTRATION FOR HIGH-PURITY GAINAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

Carrier concentration and mobility for the MOCVD-grown high-purity GaInAs epilayers on InP were investigated. A thin conductive layer with a sheet carrier concentration of 3.8×1011 cm-2 was considered to exist at the GaInAs and InP heterointerface, because of the GaInAs epilayer thickness dependence of sheet carrier concentration measured by the Hall measurements for GaInAs epilayers on InP. The Hall measurements for the bare GaInAs epilayers, which were prepared by removing the InP, were considered preferable for obtaining the carrier concentration of the high-purity GaInAs epilayers. From the data obtained for the bare GaInAs epilayers, triethylgallium was found to be a more preferable gallium source than trimethylgallium to grow high-purity GaInAs. © 1990 The Japan Society of Applied Physics.