HEAVY CARBON DOPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS USING A LOW V/III-RATIO

被引：39

作者：

KUSHIBE, M

EGUCHI, K

FUNAMIZU, M

OHBA, Y

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期

关键词：

D O I：

10.1063/1.103181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heavily carbon-doped GaAs was obtained by low-pressure metalorganic chemical vapor deposition by using trimethylgallium and arsine with a low V/III ratio. The hole concentration became as high as 2×1019 cm -3 without using intentional doping source gases when the V/III ratio was decreased to 2.4. The hole concentration coincided with the carbon concentration measured by secondary-ion mass spectroscopy. The epilayer surface tended to be rough when the V/III ratio was decreased below 10. However, when the V/III ratio was lowered to 2.4, the epilayer surface became completely mirror-like.

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页码：1248 / 1250

页数：3

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