共 23 条
[3]
ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS
[J].
JOURNAL OF APPLIED PHYSICS,
1959, 30 (08)
:1258-1268
[4]
RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .2. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENIC-DOPED MATERIAL
[J].
PHYSICAL REVIEW,
1962, 126 (04)
:1342-&
[6]
FUKUOKA N, 1973, 1972 P INT C RAD DAM, P328
[8]
ANNEALING OF DEFECTS PRODUCED IN N-TYPE GE BY ELECTRON IRRADIATION AT 30 DEGREES K
[J].
PHYSICAL REVIEW,
1969, 177 (03)
:1203-&
[10]
LOW-TEMPERATURE ANNEALING STUDIES IN GE
[J].
JOURNAL OF APPLIED PHYSICS,
1959, 30 (08)
:1269-1274