ANNEALING OF DEFECTS FORMED IN GERMANIUM AFTER IRRADIATIONS WITH PARTICLES OF VARIOUS ENERGIES

被引:6
作者
FUKUOKA, N [1 ]
SAITO, H [1 ]
TATSUMI, Y [1 ]
机构
[1] OSAKA UNIV,COLL GEN EDUC,DEPT PHYS,TOYONAKA,OSAKA,JAPAN
关键词
D O I
10.1143/JPSJ.36.793
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:793 / 799
页数:7
相关论文
共 23 条
[1]   INFRARED PROPERTIES OF 40-60 MEV ELECTRON-IRRADIATED GERMANIUM [J].
BECKER, JF ;
CORELLI, JC .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3606-&
[2]   PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].
BEMSKI, G .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198
[3]   ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J].
BROWN, WL ;
AUGUSTYNIAK, WM ;
WAITE, TR .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1258-1268
[4]   RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .2. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENIC-DOPED MATERIAL [J].
CURTIS, OL ;
CRAWFORD, JH .
PHYSICAL REVIEW, 1962, 126 (04) :1342-&
[5]   PRODUCTION AND ANNEALING OF DEFECTS IN 6-88 MEV ELECTRON-IRRADIATED N-TYPE GERMANIUM [J].
FISCHER, JE ;
CORELLI, JC .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3287-&
[6]  
FUKUOKA N, 1973, 1972 P INT C RAD DAM, P328
[7]   OBSERVATION OF IRRADIATION-INDUCED INTERSTITIAL COPPER IMPURITY IN GERMANIUM [J].
HIRAKI, A ;
CLELAND, JW ;
CRAWFORD, JH .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) :3519-&
[8]   ANNEALING OF DEFECTS PRODUCED IN N-TYPE GE BY ELECTRON IRRADIATION AT 30 DEGREES K [J].
HIRAKI, A ;
CLELAND, JW ;
CRAWFORD, JH .
PHYSICAL REVIEW, 1969, 177 (03) :1203-&
[9]   ANNEALING OF GAMMA-RAY IRRADIATED N-TYPE GERMANIUM [J].
ISHINO, S ;
NAKAZAWA, F ;
HASIGUTI, RR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (08) :1033-&
[10]   LOW-TEMPERATURE ANNEALING STUDIES IN GE [J].
MACKAY, JW ;
KLONTZ, EE .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1269-1274